Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference27 articles.
1. Nonlinear dynamics of the polarization of multitransverse mode vertical-cavity surface-emitting lasers under current modulation
2. Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach
3. Real-time experimental demonstration of low-cost VCSEL intensity-modulated 1125Gb/s optical OFDM signal transmission over 25km PON systems
4. High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array
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1. Advances in high-power vertical-cavity surface-emitting lasers;Journal of Physics D: Applied Physics;2024-06-07
2. 71% wall-plug efficiency from 780 nm-emitting laser diode with GaAsP quantum well;Optics & Laser Technology;2024-01
3. Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region;Optics Communications;2023-06
4. High Slope Efficiency Double and Triple Junction 808 nm Vertical Cavity Surface Emitting Lasers;IEEE Photonics Technology Letters;2023-05-15
5. Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon;Journal of Applied Physics;2022-04-07
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