Effect of the number of stacking layers on the characteristics of quantum-dash lasers
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference18 articles.
1. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m
2. InP based lasers and optical amplifiers with wire-/dot-like active regions
3. Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser
4. Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique
5. Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers
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1. Modeling a Two-section Monolithic InAs/InP Quantum-dash Laser: Wavelength Tunability and Sharp Turn-on Characteristics;Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology;2019
2. One-Dimensional Nature of InAs/InP Quantum Dashes Revealed by Scanning Tunneling Spectroscopy;Nano Letters;2015-06-18
3. Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters;IEEE Journal of Quantum Electronics;2014-02
4. Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser;IEEE Photonics Journal;2013-08
5. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission;Applied Physics Letters;2013-03-04
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