Author:
Wherrett B.S.,Bolger J.,Kar A.K.,Galbraith I.,Wang S.Y.,Simpson J.,Prior K.A.,Cavenett B.C.
Abstract
An explosion of interest in ZnSe based optoelectronic devices has followed the reports of diode laser action associated with this material [1,2]. We have, over a period of years, been investigating the nonlinear optical properties of bulk and thin-film ZnSe, initially with concern for all-optical switches and logic elements employing either optothermal or optoelectronic mechanisms. Degenerate-four-wave-mixing, nonlinear Fabry-Perot and z-scan techniques have been employed to measure the absorption cross-sections and induced refractive indices at cw, nanosecond and subpicosecond timescales, with particular concern for near-gap enhancements [3-6].