Development of a wafer warpage measurement technique using Moiré-based method
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Optical Society
Reference16 articles.
1. The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates
2. Stresses Developed in Optical Film Coatings
3. Characterization of a dispersion-controlled approach to surface profilometry on wafers using a white-light interferometer
4. Twyman-Green interferometer for testing microspheres
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3. A novel hybrid resampling for semiconductor wafer defect bin classification;Quality and Reliability Engineering International;2022-10-17
4. Wavelength alteration measurement using the Moiré technique;Optics Letters;2017-10-18
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