Simulation of traveling-wave resonant tunneling diode oscillator waveguides

Abstract

In a traveling-wave resonant tunneling diode oscillator, the gain medium is encapsulated in a metallic waveguide. The geometrical parameters of the system and the skin penetration depth in the metal layers are of similar length scales. It confirms the need for a full-wave simulation, where the impedance boundary conditions can not be applied in a straightforward manner. In this work, a method of moments-based electromagnetic wave solver was developed and used to illustrate different traveling-wave RTD oscillator structures.