Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Author:

Chen Chen12,Wei Fang23,Han Xiuyou1ORCID,Su Qingshuai2ORCID,Pi Haoyang2,Xin Guofeng2,Wu Huimin2,Stroganov Anton4,Sun Yanguang2,Ren Weijie2ORCID,Chen Xiao2,Ye Qing2,Cai Haiwen3,Chen Weibiao2

Affiliation:

1. Dalian University of Technology

2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

3. ZhangJiang Laboratory

4. LIGENTEC SA

Abstract

We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external cavity laser is composed of a gain chip and a dual micro-ring narrowband filter integrated on the silicon nitride photonic chip to achieve a wavelength tuning range of 55 nm and a SMSR higher than 50 dB. Through the integration of the semiconductor optical amplifier in the miniaturized package, the laser exhibits an output power of 220 mW and linewidth narrower than 8 kHz over the full C-band. Such a high-power, narrow-linewidth laser diode with a compact and low-cost design could be applied whenever coherence and interferometric resolutions are needed, such as silicon optical coherent transceiver module for space laser communication, light detection and ranging (LiDAR).

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Strategic Pilot Science and Technology Project of CAS

Liao Ning Revitalization Talents Program

Fundamental Research Funds for the Central Universities

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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