Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer-Reference-Cited by-同舟云学术

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Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer

Published:2012-12-03 Issue:27 Volume:20 Page:28009
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Van Camp Mackenzie A.,Assefa Solomon,Gill Douglas M.,Barwicz Tymon,Shank Steven M.,Rice Philip M.,Topuria Teya,Green William M. J.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference32 articles.

1. Mid-infrared photonics in silicon and germanium

2. Toward silicon-based longwave integrated optoelectronics (LIO)

3. Low loss silicon waveguides for the mid-infrared

4. Rib waveguides for mid-infrared silicon photonics

5. Silicon-on-sapphire integrated waveguides for the mid-infrared

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1. High-speed mid-infrared silicon-based electro-optic modulator at 2 μm;Optics Communications;2024-08

2. BDD‐based optimized majority/minority gate using electro‐optic Mach‐Zehnder interferometer;Microwave and Optical Technology Letters;2024-08

3. Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 µm waveband;Optics Letters;2024-04-12

4. Design and optimization of a high-speed ITO-plasmon-based asymmetric Mach-Zehnder interferometer modulator;Physics and Simulation of Optoelectronic Devices XXXII;2024-03-11

5. On-chip germanium photodetector with interleaved junctions for the 2-µm wave band;Optics Letters;2024-02-15

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