Affiliation:
1. Korea Institute of Science and Technology
2. Korea University
3. University of Science and Technology
4. Yonsei University
Abstract
Flexible mid-infrared photodetectors are essential to realize advanced imaging applications, including wearable healthcare monitoring, security, and biomedical applications. Here, we demonstrate high-performance flexible p-i-n InAs thin-film photodetectors with an optimal In0.8Al0.2As barrier layer. This In0.8Al0.2As barrier inserted between p-InAs and UID-InAs layer reduced leakage currents by a factor of 283 by blocking the flow of electrons. The fabricated flexible device exhibited relatively low dark current densities of 1.03×10−5 at 0 V and 0.85 A/cm2 at −0.5 V, comparable to both commercially available and reported homoepitaxially-grown InAs detectors. Also, the high mechanical robustness and excellent reliability of our flexible InAs photodetector were confirmed by bending tests under various curvatures and bending cycles.
Funder
Korea Institute of Science and Technology
National Research Foundation of Korea
Subject
Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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