O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform

Author:

Zafar Humaira,Paredes Bruna1,Villegas Juan1ORCID,Rasras Mahmoud1ORCID,Fernandes Pereira Mauro2ORCID

Affiliation:

1. New York University

2. Institute of Physics, Czech Academy of Sciences

Abstract

An efficient, dual-polarization silicon waveguide array with low insertion losses and negligible crosstalks for both TE and TM polarizations has been reported using S-shaped adiabatically bent waveguides. Simulation results for a single S-shaped bend show an insertion loss (IL) of ≤ 0.03 dB and ≤ 0.1 dB for the TE and TM polarizations, respectively, and TE and TM crosstalk values in the first neighboring waveguides at either side of the input waveguide are lower than −39 dB and −24 dB, respectively, over the wavelength range of 1.24 µm to 1.38 µm. The bent waveguide arrays exhibit a measured average TE IL of ≈ 0.1 dB, measured TE crosstalks in the first neighboring waveguides are ≤ −35 dB, at the 1310 nm communication wavelength. The proposed bent array can be made by using multiple cascaded S-shaped bends to transmit signals to all optical components in integrated chips.

Funder

Khalifa University of Science, Technology and Research

Horizon 2020 Framework Programme

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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