Four-wavelength Bragg mirror using GaAs/AlAs
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference10 articles.
1. Resonant‐cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure
2. Metal‐semiconductor‐metal photodetector with integrated Fabry–Perot resonator for wavelength demultiplexing high bandwidth receivers
3. Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm
4. Microcavity enhanced vertical‐cavity light‐emitting diodes
5. Low-threshold continuous-wave surface emitting lasers with etched void confinement
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial Bragg mirrors for the mid-infrared and their applications;Progress in Quantum Electronics;2001
2. Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer;IEEE Photonics Technology Letters;1996-03
3. Microcavity Emitters and Detectors;Future Trends in Microelectronics;1996
4. Molecular-beam epitaxy growth of multiple-wavelength mirrors and applications for a dual-wavelength resonant-cavity photodetector;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
5. High-reflectivity Bragg mirrors for optoelectronic applications;IEEE Journal of Quantum Electronics;1995
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