Author:
Yan Weinian,Qiu Pingping,Li Ming,Jia Ruiwen,Wang Qiuhua,Zhao Lingjuan,Kan Qiang
Abstract
In this study, 980-nm high-power bottom-emitting VCSELs are designed and simulated by PICS3D. A single VCSEL device with an active region aperture of 140μm and a peak pulsed power of 106mW@1A is fabricated.