Low-temperature growth of near-infrared luminescent Bi-doped SiOxNy thin films-Reference-Cited by-同舟云学术

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Low-temperature growth of near-infrared luminescent Bi-doped SiOxNy thin films

Published:2013-10-14 Issue:20 Volume:38 Page:4224
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Fujii Minoru,Morimoto Satoshi,Kitano Shohei,Imakita Kenji,Qiu Jianrong,Sun Hong-Tao

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. Infrared Luminescence from Bismuth-Doped Silica Glass

2. Efficient all-fiber bismuth-doped laser

3. 2 W bismuth doped fiber lasers in the wavelength range 1300-1500 nm and variation of Bi-doped fiber parameters with core composition

4. Mixed Network Effect of Broadband Near-Infrared Emission in Bi-Doped B2 O3 -GeO2 Glasses

5. On the multiplicity of Bismuth active centres in germano-aluminosilicate preform

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the origin of near-IR luminescence in SiO 2 glass with bismuth as the single dopant. Formation of the photoluminescent univalent bismuth silanolate by SiO 2 surface modification;Journal of Luminescence;2017-03

2. Ultra-broadband optical amplification at telecommunication wavelengths achieved by bismuth-activated lead iodide perovskites;Journal of Materials Chemistry C;2017

3. A Soft Chemistry-Based Route to Near-Infrared Luminescent Bismuth-Activated Glass Films;Journal of the American Ceramic Society;2016-10-11

4. High-efficiency near-infrared emission from Bismuth-doped SiO_073 thin films fabricated by ion implantation technology;Optics Letters;2016-02-01

5. Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films;Journal of Materials Chemistry C;2014

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