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Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

  • Published:2017-03-14 Issue:6 Volume:25 Page:6604
  • ISSN:1094-4087
  • Container-title:Optics Express
  • language:en
  • Short-container-title:Opt. Express

Author:

Blumröder Ulrike,Zilk Matthias,Hempel Hannes,Hoyer Patrick,Pertsch Thomas,Eichberger Rainer,Unold Thomas,Nolte Stefan

Funder

Carl-Zeiss-Stiftung

Deutsche Forschungsgemeinschaft (DFG)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-resolved radiative recombination in black silicon;Journal of Materials Science: Materials in Electronics;2023-03

2. Broadband light absorption enhancement in nanoporous black silicon synthesized by aluminium-catalyzed chemical etching;Optical Materials;2022-12

3. Terahertz emission mediated by ultrafast time-varying metasurfaces;Physical Review Research;2021-10-18

4. Effects of annealing temperature towards properties of black silicon fabricated by aluminium-assisted chemical etching;Materials Science in Semiconductor Processing;2021-10

5. Optically-Induced Dynamic Terahertz Metamaterials;2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2019-06
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