Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings-Reference-Cited by-同舟云学术

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Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings

Published:2017-03-13 Issue:6 Volume:25 Page:6550
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Xu Xuejun,Hashimoto Hideaki,Sawano Kentarou,Maruizumi Takuya

Funder

Grant-in-Aid for Scientific Research (B)

MEXT Supported Program for the Strategic Research Foundation at Private Universities

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference35 articles.

1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

2. Towards monolithic integration of germanium light sources on silicon chips

3. A micromachining-based technology for enhancing germanium light emission via tensile strain

4. Analysis of enhanced light emission from highly strained germanium microbridges

5. Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

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1. Influence of nonlinear semiconductor layer on optical properties in one-dimensional photonic crystals;International Journal of Modern Physics B;2023-08-05

2. Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si;Materials Science in Semiconductor Processing;2020-08

3. The theoretical direct-band-gap optical gain of Germanium nanowires;Scientific Reports;2020-01-08

4. Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p shallow junctions through rapid thermal annealing;Journal of Physics D: Applied Physics;2019-03-04

5. Effects of post annealing on in-situ n-doped Ge-on-Si;Semiconductor Science and Technology;2018-10-25

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