Monolithic integration of InGaAs n-FETs and lasers on Ge substrate-Reference-Cited by-同舟云学术

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Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Published:2017-02-27 Issue:5 Volume:25 Page:5146
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kumar Annie,Lee Shuh-Ying,Yadav Sachin,Tan Kian Hua,Loke Wan Khai,Wicaksono Satrio,Li Daosheng,Panah Saeid Masudy,Liang Gengchiau,Yoon Soon-Fatt,Gong Xiao,Antoniadis Dimitri,Yeo Yee-Chia

Funder

National Research Foundation Singapore (NRF)

Singapore-MIT Alliance for Research and Technology Centre (SMART)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Interconnect limits on gigascale integration (GSI) in the 21st century

2. Single-chip microprocessor that communicates directly using light

3. Ge-on-Si optoelectronics

4. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

5. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs);Optics Express;2017-12-07

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