InP photonic circuits using generic integration [Invited]-Reference-Cited by-同舟云学术

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InP photonic circuits using generic integration [Invited]

Published:2015-08-28 Issue:5 Volume:3 Page:B60
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Williams K. A.,Bente E. A. J. M.,Heiss D.,Jiao Y.,Ławniczuk K.,Leijtens X. J. M.,van der Tol J. J. G. M.,Smit M. K.

Funder

European Commission (EC)

Technologiestichting STW (Technology Foundation STW)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. InP Mach–Zehnder Modulator Platform for 10/40/100/200-Gb/s Operation

2. Monolithically Integrated 8 × 8 Space and Wavelength Selective Cross-Connect

3. From Visible Light-Emitting Diodes to Large-Scale III–V Photonic Integrated Circuits

4. An introduction to InP-based generic integration technology

5. Moore's law in photonics

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1. Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits;Optical Materials Express;2024-01-17

2. Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition;Nanomaterials;2023-08-22

3. Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows;Technologies;2023-07-07

4. Monolithic multicomponent integrated circuit with an arc-shape waveguide on Si substrate;Applied Physics A;2023-04-26

5. Beyond 100-GHz bandwidth with monolithic indium phosphide integrated circuits;CLEO 2023;2023

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