Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode-Reference-Cited by-同舟云学术

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Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode

Published:2008-11-14 Issue:22 Volume:33 Page:2719
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Rudin B.,Rutz A.,Hoffmann M.,Maas D. J. H. C.,Bellancourt A.-R.,Gini E.,Südmeyer T.,Keller U.

Funder

Intel Corporation

European Network of Excellence ePIXnet

European FP7 Collaborative Project FAST-DOT

ETH Zurich

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference12 articles.

1. High-power surface emitting semiconductor laser with extended vertical compound cavity

2. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

3. Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

4. Scalable concept for diode-pumped high-power solid-state lasers

5. 4 W single-transverse mode VECSEL utilising intra-cavity diamond heat spreader

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