Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference12 articles.
1. Solid-State Light Sources Getting Smart
2. Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN
3. Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures
4. Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser
5. Formation process of high reflective Ni∕Ag∕Au Ohmic contact for GaN flip-chip light-emitting diodes
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1. Ag–Pd–Cu alloy reflector to improve the opto-electrical performance and electromigration resistance of near ultraviolet GaN-based light-emitting diode;Journal of Alloys and Compounds;2019-09
2. Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN;Applied Surface Science;2015-12
3. Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer;Superlattices and Microstructures;2014-09
4. Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode;Current Applied Physics;2014-09
5. Delayed <111> texture for improving the thermal stability of Ag reflectors for high-performance GaN-based light-emitting diodes;Scripta Materialia;2014-06
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