C/L-band emission of InAs QDs monolithically grown on Ge substrate-Reference-Cited by-同舟云学术

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C/L-band emission of InAs QDs monolithically grown on Ge substrate

Published:2017-07-21 Issue:8 Volume:7 Page:2955
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Wei Wen-Qi,Wang Jian-Huan,Gong Yue,Shi Jin-An,Gu Lin,Xu Hong-Xing,Wang Ting,Zhang Jian-Jun

Funder

Chinese Academy of Sciences (CAS)

Ministry of Science and Technology of the People's Republic of China (MOST)

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Recent progress in lasers on silicon

2. Energy-efficient communication

3. The commercialization of silicon photonics

4. On-chip light sources for silicon photonics

5. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-doped 1300 nm InAs/GaAs quantum dot lasers directly grown on an SOI substrate;Optics Letters;2021-11-01

2. Bufferless Epitaxial Growth of GaAs on Step-Free Ge (001) Mesa;Chinese Physics Letters;2021-06-01

3. InAs/GaAs quantum dot single-section mode-locked lasers on Si (001) with optical self-injection feedback;Optics Express;2021-01-04

4. Monolithic growth of GaAs/Al0.3Ga0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties;Journal of Physics D: Applied Physics;2020-08-05

5. Phosphorus-free 15 µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform;Optics Letters;2020-03-31

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