Author:
Tani Masahiko,Santos Ramon delos,Furuya Takashi,Kitahara Hideaki,Estacio Elmer,Muldera Joselito,Escaño Mary Clare,Talara Miezel,Bakunov Michael
Abstract
GaAs is a III-V semiconductor with zinc-blende structure and direct band gap of 1.43 eV at room temperature.