Author:
Xing Jianghao,Sun Changzheng,Xiong Bing,Wang Jian,Hao Zhibiao,Wang Lai,Han Yanjun,Li Hongtao,Luo Yi
Abstract
An InP-based electro-optic modulator with an n-i-n heterostructure is demonstrated. An ultra-low half-wave voltage-length product of 0.22 V·cm is recorded, together with 40 GHz bandwidth for a 2-mm modulation length.
Cited by
1 articles.
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1. High-speed optoelectronic devices;Science China Information Sciences;2023-04-17