Author:
Doganlar C.,Schmiedeke P.,Jeong H. W.,Döblinger M.,Finley J. J.,Koblmüller G.
Abstract
We demonstrate lasing from single ternary GaAsSb nanowire (NW) lasers with low threshold under optical pumping at silicon transparent wavelengths (~1.1-1.2 µm). These breakthroughs are enabled by combining high-quality, phase-pure GaAsSb NWs with extended cavity lengths and effective surface passivation using lattice-matched InAlGaAs layers. Lasing at thresholds of ~ 3 µJ/cm2 and up to 250 K is verified.