Author:
Lin Tsung-Tse,Wang Li,Wang Ke,Grange Thomas,Birner Stefan,Hirayama Hideki
Abstract
A 1.31 W peak power and 52 mW average power THz QCL is presented by variable Al composition active structure with high doping concentration based on NEGF method design. Device has thick growth active layers and large mesa size with the consideration of heat dissipation.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献