Author:
Du Haoze,Kadowaki Takuya,Tate Naoya,Kawazoe Tadashi,Oki Yuji,Ohtsu Motoichi,Hayashi Kenshi
Abstract
An Al-doped 4H-SiC device exhibits a large Verdet constant at a specific wavelength and polarization state via DPP-assisted annealing under the corresponding conditions. Thus, it can function as a novel MO-SLM for high-performance spectroscopic systems.