Author:
Jung Hyunseung,Hale Lucy L,Briscoe Jayson,Sarma Raktim,Luk Ting Shan,Addamane Sadhvikas J,Reno John L,Brener Igal,Mitrofanov Oleg
Abstract
We demonstrate the use of low-temperature grown GaAs (LT-GaAs) metasurface as an ultrafast photoconductive switching element gated with 1550 nm laser pulses. The metasurface is designed to enhance a weak two-step photon absorption at 1550 nm, enabling THz pulse detection.