Author:
Wood Michael G.,Bahr Matthew,Gutierrez Jordan E.,Anderson Evan M.,Finnegan Patrick S.,Weatherred Scott E.,Martinez William M.,Hummell Courtney L.,Reyna Robert,Arterburn Shawn C.,Friedmann Tom A.,Hawkins Samuel D.,Patel Victor J.,Hendrickson Alex T.,Klem John F.,Long Chris M.,Olesberg Jonathon T.,Shank Joshua C.,Chumney Daniel R.,Looker Quinn M.
Abstract
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.