Design of the all-silicon long-wavelength infrared achromatic metalens based on deep silicon etching

Abstract

An all-silicon long-wavelength infrared (LWIR) achromatic metalens based on deep silicon etching is designed in this paper. With a fixed aperture size, the value range of the equivalent optical thickness of the non-dispersive meta-atoms constructing the achromatic metalens determines the minimum f-number. The fabrication characteristic with high aspect ratio of deep silicon etching amplifies the difference value of optical thickness between different meta-atoms by increasing the propagation distance of the propagation mode, which ensures a small f-number to obtain a better imaging resolution. A 280-µm-diameter silicon achromatic metalens with a f-number of 1 and the average focusing efficiency of 27.66% has been designed and simulated to validate the feasibility of this strategy. The simulation results show that the maximum focal length deviation percentage from the target value between the wavelength of 8.6 and 11.4 µm is 1.61%. This achromatic metalens design is expected to play a role in the field of LWIR integrated optical system.