Author:
Seki Shunji,Yamanaka Takayuki,Kurumada Katsuhiko
Abstract
InGaAsP/InP buried-heterostructure (BH) laser diodes play a significant role in long-haul optical transmission systems. Recent requirements for InGaAsP/InP lasers with light output of more than tens of milliwatts have led to the need for BH structures that have an ultimately low leakage current under high-current operation. Although the current leakage mechanism in conventional BH structures of which buried region consists of p-n-p-n structure has been extensively studied,1 the basic design principles for lowering leakage current under high-current operation have not been clarified yet.