Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range

Abstract

We demonstrate heavy doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing, where we achieved heavily doped ZnO:Ga with free-carrier concentrations of ~9.5 × 1020 cm-3, which results in a plasma wavelength of 1.16 µm.