Author:
Yapparov Rinat,Lynsky Cheyenne,Chow Yi Chao,Nakamura Shuji,DenBaars Steven P.,Speck James S.,Marcinkevičius Saulius
Abstract
Ways to improve efficiency of high-power LEDs based on InGaN/(In)GaN multiple quantum wells are explored by studying interwell carrier transport and recombination. Best results are achieved for InGaN barriers with thin GaN or AlGaN interlayers.