Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well-Reference-Cited by-同舟云学术

Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well

Published:2019-11-18 Issue:33 Volume:58 Page:9089
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Podoskin Alexandr,Golovin Vyacheslav,Gavrina Polina,Veselov Dmitriy,Zolotarev Vasiliy,Shamakhov Viktor,Nikolaev Dmitrii,Leshko Andrey,Slipchenko Sergey,Pikhtin Nikita,Kopév Petr

Funder

Russian Science Foundation

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference24 articles.

1. Ytterbium-doped fiber amplifiers

2. Laser radar: historical prospective—from the East to the West

3. Quasi-phase-matched second harmonic generation: tuning and tolerances

4. Laser beam combining for high-power, high-radiance sources

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