Author:
Colak S.,Bhargava R.N.,Fitzpatrick B.J.,Sicignano A.
Abstract
There has been a resurgence of studies in wide band gap II-VI semiconductors for applications such as electron beam pumped visible lasers.1,2 For this purpose we have studied the luminescence properties of a variety of ZnSe crystals with various impurities under e-beam excitation densities up to several MW/cm2 for temperatures above 100°K.