Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer-Reference-Cited by-同舟云学术

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Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer

Published:2016-02-22 Issue:5 Volume:24 Page:4391
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lee Kwang Jae,Chun Jaeyi,Kim Sang-Jo,Oh Semi,Ha Chang-Soo,Park Jung-Won,Lee Seung-Jae,Song Jae-Chul,Baek Jong Hyeob,Park Seong-Ju

Funder

ILJIN LED Co., Ltd

National Research Foundation of Korea (NRF)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference35 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Solid-State Light Sources Getting Smart

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

5. Recent Progress in GaN-Based Light-Emitting Diodes

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

2. Application of porous materials and structures for improving optical and thermal performance of inorganic and organic light-emitting diodes: A review;Sensors and Actuators A: Physical;2022-11

3. Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption;Micromachines;2021-04-05

4. Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells;ACS Energy Letters;2020-09-17

5. Porous nitride semiconductors reviewed;Journal of Physics D: Applied Physics;2020-07-06

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