Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Author:

Dou Qingqing1,Mo Junyao1,Xu Beibei1ORCID,Gong Nan1,Man Tao1,Li Zicheng1,Bai Gongxun2,Ma Chonggen3,Qiu Jianrong1,Hao Jianhua4

Affiliation:

1. Zhejiang University

2. China Jiliang University

3. Chongqing University of Posts and Telecommunications

4. The Hong Kong Polytechnic University

Abstract

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2− at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

the Open Fund of the State Key Laboratory of Modern Optical Instrumentation of Zhejiang University

Zhejiang University K.P. Chao’s High Technology Development Foundation

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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