Affiliation:
1. Zhejiang University
2. China Jiliang University
3. Chongqing University of Posts and Telecommunications
4. The Hong Kong Polytechnic University
Abstract
Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2− at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O−, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
the Open Fund of the State Key Laboratory of Modern Optical Instrumentation of Zhejiang University
Zhejiang University K.P. Chao’s High Technology Development Foundation
Subject
Atomic and Molecular Physics, and Optics