Affiliation:
1. Institute of Semiconductors
2. University of Chinese Academy of Sciences
3. Weifang Academy of Advanced Opto-Electronic Circuits
Abstract
In this study, a low-resistance, low-loss, continuously gradual composition extreme double asymmetric (CGC-EDAS) epitaxial structure is designed to improve efficiency. The structure and facet reflectivity of the broad area (BA) lasers are optimized to maximize the power conversion efficiency (PCE). In the experiment, the peak PCE of 75.36% is measured at 25°C. At 0°C, a peak PCE of 81.10% is measured and the PCE can still reach 77.84% at an output power of 17.10 W, which, to the best of our knowledge, is the highest value to date for any BA lasers.
Funder
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
10 articles.
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