Doping profile architecture towards lower loss and higher efficiency for laser diodes-Reference-Cited by-同舟云学术

Doping profile architecture towards lower loss and higher efficiency for laser diodes

Published:2023-08-07 Issue:17 Volume:31 Page:27894
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Xu Chuanwang¹,Qi Aiyi²,Wang Juwen¹,Qu Hongwei²¹,Wang Liang¹,Meng Fansheng¹,Han Renbo¹,Fu Ting¹,Zhou Xuyan³,Zheng Wanhua²¹³^ORCID

Affiliation:

1. University of Chinese Academy of Sciences

2. Chinese Academy of Sciences

3. Weifang Academy of Advanced Opto-Electronic Circuits

Abstract

A doping optimization model towards lower loss and higher efficiency at the target operating current is investigated. This model considers the effect of doping concentration on the series resistance and the internal loss. 780 nm lasers doped with a normal doping profile (Dop_normal) and an optimized doping profile (Dop_optimize) are both designed and fabricated. After doping optimization, the power loss decreased by 17%, the output power of the lasers increased by 26% and the electro-optical conversion efficiency increased by 22%. The model provides significant theoretical guidance for the optimization of the laser doping.

Funder

Key Technology Research and Development Program of Shandong

Key-Area Research and Development Program of Guangdong Province

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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