Stressed Ge:Ga infrared detectors: performance and operational parameters-Reference-Cited by-同舟云学术

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Stressed Ge:Ga infrared detectors: performance and operational parameters

Published:1986-05-15 Issue:10 Volume:25 Page:1698
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Lutz D.,Lemke D.,Wolf J.

Publisher

The Optical Society

Reference1 articles.

1. Ge : Ga photoconductors in low infrared backgrounds

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryocooled terahertz photoconductive detector system with background-limited performance in 1.5–4 THz frequency range;Review of Scientific Instruments;2015-10

2. Silicon Devices and Circuits;Low Temperature Electronics;2001

3. Cryogenic Readout Electronics & Technology for FIRST's Stressed Array;Le Journal de Physique IV;1996-04

4. Low-background far-infrared detectors and arrays;Optical Engineering;1994-05-01

5. Three-element stressed Ge:Ga photoconductor array for the infrared telescope in space;Applied Optics;1992-02-01

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