Strain-induced anisotropy measurement in oxide films grown on silicon
Author:
Publisher
The Optical Society
Reference10 articles.
1. RESIDUAL STRESSES AT AN OXIDE‐SILICON INTERFACE
2. Measurement of Strains at Si‐SiO2 Interface
3. Optical Evidence for a Silicon‐Silicon Oxide Interlayer
4. Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
5. Strain induced anisotropy in As_2S_3, As_2Se_3, and ZnSe films on KCl substrates via 106-μm and 06328-μm ellipsometer measurements and 06328-μm reflector measurements
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4. Ellipsometric Thickness Measurements of Ultrathin Silicon Oxides Formed in Aqueous Solution;Japanese Journal of Applied Physics;1998-06-15
5. In situ measurements of ultrathin silicon oxide dissolution rates;Thin Solid Films;1998-06
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