Response time characteristics of a transmissive uniformly doped GaAsP photocathode
-
Published:2023-11-15
Issue:33
Volume:62
Page:8804
-
ISSN:1559-128X
-
Container-title:Applied Optics
-
language:en
-
Short-container-title:Appl. Opt.
Author:
Jia Tiantian1,
Gan Linyu1,
Guo Xin1,
Qiu Hongjin12,
Zhang Ruoyu1,
Liu Xuchuan1,
Du Jinjuan1,
Zhang Yijun3,
Liu Lei3
Affiliation:
1. Science and Technology on Low-Light-Level Night Version Laboratory
2. Beijing Institute of Technology
3. Nanjing University of Science and Technology
Abstract
In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteristics and quantum efficiency of a GaAsP photocathode are systematically studied, and the accuracy of the theoretical calculation is verified by experiments. The response speed and quantum efficiency of the GaAsP photocathode can be greatly improved by adjusting the thickness of the GaAsP activation layer reasonably.
Funder
Defense Industrial Technology Development Program of China
National Natural Science Foundation of China
Publisher
Optica Publishing Group
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering