Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Author:
Funder
Research Grants Council, University Grants Committee
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference36 articles.
1. Optofluidic UV-Vis spectrophotometer for online monitoring of photocatalytic reactions
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5. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
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1. Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability;IEEE Transactions on Electron Devices;2024-08
2. Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging;Advanced Materials;2024-07-18
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4. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure;ACS Omega;2024-05-28
5. Solar-blind ultraviolet emission-detection monolithic integration of AlGaN multiple-quantum-well diodes via concentric ring-circle configuration;Applied Physics Letters;2024-04-15
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