Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer-Reference-Cited by-同舟云学术

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

Published:2019-09-12 Issue:20 Volume:27 Page:A1458
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lang J.,Xu F. J.,Ge W. K.,Liu B. Y.,Zhang N.,Sun Y. H.,Wang J. M.,Wang M. X.,Xie N.,Fang X. Z.,Kang X. N.,Qin Z. X.,Yang X. L.,Wang X. Q.^ORCID,Shen B.

Funder

National Basic Research Program of China (973 Program)

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference17 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

3. Polarization-enhanced Mg doping of AlGaN/GaN superlattices

4. Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

5. On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

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3. Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer;IEEE Transactions on Electron Devices;2024-05

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