Study of dynamic biasing InGaAs/InAlAs avalanche photodiodes with different active areas

Abstract

In this work, by comparing and analyzing dynamic biasing InGaAs/InAlAs avalanche photodiodes(APDs) with different active areas, it is found that they have different noise suppression frequency ranges. The upper limit frequency(defined as the frequency at which the noise suppression effect begins to fail) of InGaAs/InAlAs APDs with active area diameter of 50 µm, 100 µm and 200 µm are 2400 MHz, 1990MHz and 1400 MHz respectively. In addition, for InGaAs/InAlAs APDs with an active area diameter of 50 µm, 100 µm and 200 µm, their optimal frequencies of dynamic biasing (defined as the frequency corresponding to the optimal SNR) are 1877MHz, 1670 MHz and 1075 MHz respectively. At last, applying dynamic biasing technology, it achieves a useful gain of 6698.1, which is much greater than that of DC bias (47.2), and this technology has the potential to be applied in high sensitivity laser radar receivers.