Infrared absorption of n-type tensile-strained Ge-on-Si-Reference-Cited by-同舟云学术

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Infrared absorption of n-type tensile-strained Ge-on-Si

Published:2013-02-22 Issue:5 Volume:38 Page:652
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Wang Xiaoxin,Li Haofeng,Camacho-Aguilera Rodolfo,Cai Yan,Kimerling Lionel C.,Michel Jurgen,Liu Jifeng

Funder

APIC Corporation

Naval Air Warfare Center-Aircraft Division (NAWC-AD)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. High performance, waveguide integrated Ge photodetectors

2. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

3. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

4. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

5. Ge-on-Si laser operating at room temperature

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1. The optical gain of Ge nanowires engineered by the [100] direction uniaxial stress perpendicular to the nanowire axis;Physics Letters A;2021-09

2. Germanium vertically light-emitting micro-gears generating orbital angular momentum;Optics Express;2018-12-21

3. Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley;Journal of Physics: Condensed Matter;2018-10-23

4. Performance analysis of tin-incorporated group-IV alloy based transistor laser;Optics & Laser Technology;2018-10

5. Emerging technologies in Si active photonics;Journal of Semiconductors;2018-05-29

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