C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities-Reference-Cited by-同舟云学术

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C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Published:2013-05-20 Issue:11 Volume:38 Page:1760
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Purnawirman ,Sun J.,Adam T. N.,Leake G.,Coolbaugh D.,Bradley J. D. B.,Hosseini E. Shah,Watts M. R.

Funder

Defense Advanced Research Projects Agency Electronic Photonics Integration (DARPA-EPHI)

Samsung Global Research Outreach (GRO) Program

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference11 articles.

1. An electrically pumped germanium laser

2. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells

3. Demonstration of a silicon Raman laser

4. Guided-wave laser based on erbium-doped silica planar lightwave circuit

5. Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al_2O_3:Er^3+ optical amplifiers on silicon

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1. Waveguide Amplifiers in SiN Photonics Heterogeneous Integration with Er:Yb:TeO₂ thin films;2024 22nd International Conference on Optical Communications and Networks (ICOCN);2024-07-26

2. A fully hybrid integrated erbium-based laser;Nature Photonics;2024-06-10

3. Silicon photonics-based high-energy passively Q-switched laser;Nature Photonics;2024-02-09

4. Inverse-designed silicon nitride reflectors;Optics Letters;2024-02-02

5. Integrated Femtosecond Pulse Amplifier;CLEO 2024;2024

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