Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3-Reference-Cited by-同舟云学术

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Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3

Published:2015-10-20 Issue:22 Volume:23 Page:28300
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Oh Sooyeoun,Jung Younghun,Mastro Michael A.,Hite Jennifer K.,Eddy Charles R.,Kim Jihyun

Funder

Korea Institute of Energy Technology Evaluation and Planning (KETEP)

Office of Naval Research (ONR)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

2. Wide-bandgap semiconductor ultraviolet photodetectors

3. Solar-Blind Photodetectors for Harsh Electronics

4. Low-Dimensional Nanostructure Ultraviolet Photodetectors

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1. 10 × 10 Ga₂O₃-based solar-blind UV detector array and imaging characteristic;Journal of Semiconductors;2024-09-01

2. Solar-blind UV detector with fast response speed and an ultrahigh detectivity based on SrTiO3 (111) substrate grown β-Ga2O3 thin film;Vacuum;2024-08

3. Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors;ACS Omega;2024-06-05

4. Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time;Journal of Applied Physics;2024-01-05

5. Influence of annealing pretreatment in different atmospheres on crystallization quality and UV photosensitivity of gallium oxide films;RSC Advances;2024

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