Investigation of spectro-temporal high-order sideband generation from transition metal dichalcogenides [Invited]

Author:

Liu Yaxin1,Jiang Shicheng2ORCID,Zhu Bingbing1,Zhang Sheng1,Liu Weifeng1,Tao Zhensheng1ORCID

Affiliation:

1. Shanghai Key Laboratory of Metasurfaces for Light Manipulation

2. East China Normal University

Abstract

High-order sideband generation (HSG) in semiconductors under intense terahertz fields has been extensively studied, because it provides essential information for studying ultrafast dynamics in strong-field-dressed quantum materials. In particular, transition metal dichalcogenides (TMDCs), characterized by their unique band structures, provide an exemplary semiconductor system to explore the influence of material band structure on strong-field-induced modulation of HSG. In this work, we investigate the spectro-temporally resolved HSG from different bulk TMDC materials. Our results reveal distinct temporal HSG spectra, which can be attributed to the different absorption behaviors of these materials. Simulations based on the strong-field approximation and Floquet theory can well reproduce the experimental observations. Our work also delves into the spectro-temporal interference that emerges when neighboring harmonic orders overlap in the HSG spectrum. This work enhances our understanding of high-order sideband dynamics in strong-field-dressed semiconductors, offering insights for applications in spectrum- and phase-resolved ultrafast measurements.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Municipal Science and Technology Basic Research Project

Publisher

Optica Publishing Group

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