Abstract
We demonstrate infrared supercontinuum generation in 4H-SiC on
insulator slab waveguides. The effect of waveguide geometry parameters
on dispersion is investigated to switch the zero-dispersion wavelength
close to the pump wavelength. The 1 cm long 4H-SiC waveguide is
pumped by 100 fs pulses at 1550 nm with 2000 W
peak power, and the generated supercontinuum extends from
∼
1000
to
∼
3560
n
m
(at 20 dB level). This work
shows that 4H-SiC has significant potential as on-chip photonic
sources for spectroscopic applications in infrared wavelengths.
Funder
National Key Research and Development
Program of China
National Natural Science Foundation of
China
Young Scholars Program of Shandong
University
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Cited by
3 articles.
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