Affiliation:
1. Institute of Microelectronics of Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
3. Guangdong Greater Bay Area Applied Research Institute of Integrated Circuit and Systems
4. Beijing Institute of Technology
Abstract
Beyond extreme ultraviolet (BEUV) lithography with a 6 × nm wavelength is regarded as a future technique to continue the pattern shirking in integrated circuit (IC) manufacturing. This work proposes an optimization method for the mask structure to improve the imaging quality of BEUV lithography. Firstly, the structure of mask multilayers is optimized to maximize its reflection coefficient. Then, a mask diffraction near-field (DNF) model is established based on the Born series algorithm, and the aerial image of BEUV lithography system can be further calculated. Additionally, the mask absorber structure is inversely designed using the particle swarm optimization (PSO) algorithm. Simulation results show a significant improvement of the BEUV lithography imaging obtained by the proposed optimization methods. The proposed workflow can also be expanded to areas of EUV and soft x ray imaging
Funder
National Natural Science Foundation of China
Ministry of Science and Technology of the People's Republic of China
Guangdong Province Research and Development Program in Key Fields
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Beijing Institute of Electronics
Beijing Association for Science and Technology
University of Chinese Academy of Sciences
Fundamental Research Funds for the Central Universities