Silicon mode-insensitive modulator for TE0 mode and TE1 mode

Author:

Zhou Gangqiang12ORCID,Ran Shihuan3ORCID,Lu Liangjun34ORCID,Chen Jianping34,Zhou Linjie34

Affiliation:

1. Science and Technology on Antenna and Microwave Laboratory

2. Nanjing Research Institute of Electronics Technology

3. Shanghai Institute for Advanced Communication and Data Science

4. SJTU-Pinghu Institute of Intelligent Optoelectronics

Abstract

Mode-division multiplexing (MDM), which could further increase the capacity and flexibility of the communication systems, has attracted much attention. In this Letter, we demonstrate a proof-of-principle silicon mode-insensitive modulator based on the balanced Mach–Zehnder interferometer that could realize modulation of both TE0 and TE1 modes using a horizontal PN junction. The PN junction is offset from the center of the waveguide to the n-type doped region to modulate both TE0 and TE1 modes effectively. An adiabatic directional coupler is used as a mode-insensitive 3-dB power splitter for both modes. A mode-insensitive thermal phase shifter is used to change the operation point of the modulator. On-off keying modulation at 32 Gb/s is successfully demonstrated for both TE0 and TE1 modes. This modulator can be potentially used in MDM-assisted optical sampling systems.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Municipal Science and Technology Major Project

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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