Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts-Reference-Cited by-同舟云学术

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Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts

Published:2017-10-17 Issue:22 Volume:25 Page:26615
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Zhou Shengjun,Liu Xingtong,Gao Yilin,Liu Yingce,Liu Mengling,Liu Zongyuan,Gui Chengqun,Liu Sheng

Funder

National High-tech R and D Program of China

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference37 articles.

1. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

2. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display

3. III-nitride core–shell nanorod array on quartz substrates

4. Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes

5. Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

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